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1

Five nanometre CMOS technology

Hiramoto, Toshiro

Journal:

Nature Electronics

Year:

2019

File:

PDF, 577 KB

2019

2

Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme

Tetsu Ohtou, Kouki Yokoyama, Ken Shimizu, Toshiharu Nagumo, Toshiro Hiramoto

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 909 KB

english, 2007

3

Effects of Interface Traps on Charge Retention Characteristics in Silicon-Quantum-Dot-Based Metal-Oxide-Semiconductor Diodes

Shi, Yi, Saito, Kenichi, Ishikuro, Hiroki, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

1999

Language:

english

File:

PDF, 292 KB

english, 1999

4

Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

Jin, Chengji, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 16.61 MB

2020

5

Statistical analysis of temperature dependence of worst case static random access memory data retention voltage using extreme value theory

Mizutani, Tomoko, Takeuchi, Kiyoshi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2020

File:

PDF, 1.03 MB

2020

6

Superior subthreshold characteristics of gate-all-around (GAA) p-type junctionless poly-Si nanowire transistor with ideal subthreshold slope

Ahn, Min-Ju, Saraya, Takuya, Kobayashi, Masaharu, Sawamoto, Naomi, Ogura, Atsushi, HIRAMOTO, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2020

File:

PDF, 1.39 MB

2020

7

[IEEE 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2020.6.13-2020.6.14)] 2020 IEEE Silicon Nanoelectronics Workshop (SNW) - Integrated Circuits Composed of Nanowire and Single-Electron Transistors Operating at Room Temperature

Mizutani, Tomoko, Takeuchi, Kiyoshi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro

Year:

2020

File:

PDF, 3.38 MB

2020

8

Threshold voltage fluctuations induced by statistical ‘position’ and ‘number’ impurity fluctuations in bulk MOSFETs

Yuri Yasuda, Makoto Takamiya, Toshiro Hiramoto

Journal:

Superlattices and Microstructures

Year:

2000

Language:

english

File:

PDF, 146 KB

english, 2000

9

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Experimental Study on Quantum Structure of Silicon Nano Wire and Its Impact on Nano Wire MOSFET and Single-Electron Transistor

Kobayashi, Masaharu, Hiramoto, Toshiro

Year:

2006

Language:

english

File:

PDF, 3.48 MB

english, 2006

10

[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - Transistor evolution for CMOS extension and future information processing technologies

Hiramoto, Toshiro

Year:

2009

Language:

english

File:

PDF, 631 KB

english, 2009

11

[IEEE 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2014.7.15-2014.7.16)] 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Mechanical grinding of Au/SiO2 hybrid-bonded substrates for 3D integrated image sensors

Hagiwara, Kei, Goto, Masahide, Ohtake, Hiroshi, Iguchi, Yoshinori, Saraya, Takuya, Toshiyoshi, Hiroshi, Higurashi, Eiji, Hiramoto, Toshiro

Year:

2014

Language:

english

File:

PDF, 303 KB

english, 2014

12

[IEEE 2011 IEEE Custom Integrated Circuits Conference - CICC 2011 - San Jose, CA, USA (2011.09.19-2011.09.21)] 2011 IEEE Custom Integrated Circuits Conference (CICC) - Statistical advantages of intrinsic channel fully depleted SOI MOSFETs over bulk MOSFETs

Hiramoto, Toshiro, Kumar, Anil, Mizutani, Tomoko, Nishimura, Jun, Saraya, Takuya

Year:

2011

Language:

english

File:

PDF, 594 KB

english, 2011

13

Gate Length and Gate Width Dependence of Drain Induced Barrier Lowering and Current-Onset Voltage Variability in Bulk and Fully Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistors

Kumar, Anil, Mizutani, Tomoko, Hiramoto, Toshiro

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.38 MB

english, 2012

14

[IEEE 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Rohnert Park, CA, USA (2015.10.5-2015.10.8)] 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - 128 × 96 Pixel-parallel three-dimensional integrated CMOS image sensors with 16-bit A/D converters: By direct bonding with embedded Au electrodes

Goto, Masahide, Hagiwara, Kei, Honda, Yuki, Nanba, Masakazu, Ohtake, Hiroshi, Iguchi, Yoshinori, Saraya, Takuya, Kobayashi, Masaharu, Higurashi, Eiji, Toshiyoshi, Hiroshi, Hiramoto, Toshiro

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

15

Impact of feline AIM on the susceptibility of cats to renal disease

Sugisawa, Ryoichi, Hiramoto, Emiri, Matsuoka, Shigeru, Iwai, Satomi, Takai, Ryosuke, Yamazaki, Tomoko, Mori, Nobuko, Okada, Yuki, Takeda, Naoki, Yamamura, Ken-ichi, Arai, Toshiro, Arai, Satoko, Miyaza

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 2.14 MB

english, 2016

16

Measurement of Static Random Access Memory Power-Up State using an Addressable Cell Array Test Structure

Takeuchi, Kiyoshi, Mizutani, Tomoko, Shinohara, Hirofumi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro

Journal:

IEEE Transactions on Semiconductor Manufacturing

Year:

2017

Language:

english

File:

PDF, 3.35 MB

english, 2017

17

[IEEE 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2017.5.16-2017.5.18)] 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - 3-Layered Au/SiO2 hybrid bonding with 6-μm-pitch au electrodes for 3D structured image sensors

Honda, Yuki, Goto, Masahide, Watabe, Toshihisa, Hagiwara, Kei, Nanba, Masakazu, Iguchi, Yoshinori, Saraya, Takuya, Kobayashi, Masaharu, Higurashi, Eiji, Toshiyoshi, Hiroshi, Hiramoto, Toshiro

Year:

2017

Language:

english

File:

PDF, 426 KB

english, 2017

18

(Invited) Pixel-Parallel 3-D Integrated CMOS Image Sensors for Next-Generation Video Systems

Goto, Masahide, Honda, Yuki, Watabe, Toshihisa, Hagiwara, Kei, Nanba, Masakazu, Iguchi, Yoshinori, Saraya, Takuya, Kobayashi, Masaharu, Higurashi, Eiji, Toshiyoshi, Hiroshi, Hiramoto, Toshiro

Journal:

ECS Transactions

Year:

2018

Language:

english

File:

PDF, 211 KB

english, 2018

19

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Quarter Video Graphics Array Full-Digital Image Sensing with Wide Dynamic Range and Linear Output Using Pixel-Wise 3D Integration

Goto, Masahide, Honda, Yuki, Watabe, Toshihisa, Hagiwara, Kei, Nanba, Masakazu, Iguchi, Yoshinori, Saraya, Takuya, Kobayashi, Masaharu, Higurashi, Eiji, Toshiyoshi, Hiroshi, Hiramoto, Toshiro

Year:

2018

Language:

english

File:

PDF, 576 KB

english, 2018

20

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Sugii, Nobuyuki, Yamamoto, Yoshiki, Makiyama, Hideki, Yamashita, Tomohiro, Oda, Hidekazu, Kamohara, Shiro, Yamaguchi, Yasuo, Ishibashi, Koichiro, Mizutani, Tomoko, Hiramoto, Toshiro

Journal:

Journal of Low Power Electronics and Applications

Year:

2014

Language:

english

File:

PDF, 441 KB

english, 2014

21

[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - A Feasibility Study on Ferroelectric Shadow SRAMs Using a New Variability Design Scheme

Takeuchi, Kiyoshi, Kobayashi, Masaharu, Hiramoto, Toshiro

Year:

2019

Language:

english

File:

PDF, 433 KB

english, 2019

22

[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Steep Subthreshold Slope below 60mV/dec in Junctionless SOI Transistors at Low Drain Voltage of 50mV

Ahn, Min-Ju, Takeuchi, Kiyoshi, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro

Year:

2019

Language:

english

File:

PDF, 618 KB

english, 2019

23

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Triple-Stacked Wafer-to-Wafer Hybrid Bonding for 3D Structured Image Sensors

Honda, Yuki, Goto, Masahide, Watabe, Toshihisa, Nanba, Masakazu, Iguchi, Yoshinori, Saraya, Takuya, Kobayashi, Masaharu, Higurashi, Eiji, Toshiyoshi, Hiroshi, Hiramoto, Toshiro

Year:

2019

Language:

english

File:

PDF, 5.24 MB

english, 2019

24

Deep sub-0.1-µm MOSFETs with very thin SOI layer for ultralow-power applications

Makoto Takamiya, Yuri Yasuda, Toshiro Hiramoto

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1998

Language:

english

File:

PDF, 4.57 MB

english, 1998

25

Non-equilibrium effects on quasi-one-dimensional weak and strong localizations

Toshiaki Ikoma, Kazuhiko Hirakawa, Toshiro Hiramoto, Takahide Odagiri

Journal:

Solid-State Electronics

Year:

1989

Language:

english

File:

PDF, 549 KB

english, 1989

26

Analytical model of body factor in short channel bulk MOSFETs for low voltage applications

Anil Kumar, Toshiharu Nagumo, Gen Tsutsui, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 264 KB

english, 2004

27

Body factor conscious modeling of single gate fully depleted SOI MOSFETs for low power applications

Anil Kumar, Toshiharu Nagumo, Gen Tsutsui, Tetsu Ohtou, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 293 KB

english, 2005

28

Hopping transport in multiple-dot silicon single electron MOSFET

Hiroki Ishikuro, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 334 KB

english, 1998

29

Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique

Toshikazu Mukaiyama, Ken-ichi Saito, Hiroki Ishikuro, Makoto Takamiya, Takuya Saraya, Toshiro Hiramoto

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 449 KB

english, 1998

30

Quantum effects and single-electron charging effects in nano-scale silicon MOSFETs at room temperature

Toshiro Hiramoto, Hideaki Majima, Masumi Saitoh

Journal:

Materials Science and Engineering: B

Year:

2003

Language:

english

File:

PDF, 254 KB

english, 2003

31

Effects of interface traps in silicon-quantum-dots-based memory structures

Yuan Xiaoli, Shi Yi, Gu Shulin, Zhu Jianmin, Zheng Youdou, Saito Kenichi, Ishikuro Hiroki, Hiramoto Toshiro

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2000

Language:

english

File:

PDF, 188 KB

english, 2000

32

Room-temperature demonstration of low-voltage and tunable static memory based on negative differential conductance in silicon single-electron transistors

Saitoh, Masumi, Harata, Hidehiro, Hiramoto, Toshiro

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 294 KB

english, 2004

33

Quantum mechanical effects in the silicon quantum dot in a single-electron transistor

Ishikuro, Hiroki, Hiramoto, Toshiro

Journal:

Applied Physics Letters

Year:

1997

Language:

english

File:

PDF, 369 KB

english, 1997

34

Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Shi, Yi, Saito, Kenichi, Ishikuro, Hiroki, Hiramoto, Toshiro

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 304 KB

english, 1998

35

Expression of cyclic nucleotide phosphodiesterase 3A in isolated rat submandibular acini

Kasumi Shimizu, Taku Murata, Kenichi Hiramoto, Takeo Sugiyama, Toshiyuki Nakagawa, Vincent C. Manganiello, Toshiro Tagawa

Journal:

Archives of Oral Biology

Year:

2006

Language:

english

File:

PDF, 230 KB

english, 2006

36

A Case of Mucous Cyst in the Lingual Retromolar Region

Motoshi Narita, Toshiyuki Nakagawa, Kenichi Hiramoto, Kasumi Simizu, Takeo Sugiyama, Taku Murata, Toshiro Tagawa

Journal:

Journal of Oral and Maxillofacial Surgery

Year:

2007

Language:

english

File:

PDF, 474 KB

english, 2007

37

Design Guideline of Multi-Gate MOSFETs With Substrate-Bias Control

Toshiharu Nagumo, Toshiro Hiramoto

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 692 KB

english, 2006

38

Squamous Cell Carcinoma of the Lower Lip in an Elderly Patient with Xeroderma Pigmentosum

Kenichi Hiramoto, Kasumi Shimizu, Motoshi Narita, Tohru Tokuda, Taku Murata, Toshiro Tagawa

Journal:

Asian Journal of Oral and Maxillofacial Surgery

Year:

2007

Language:

english

File:

PDF, 181 KB

english, 2007

39

A case of bullous pemphigoid with initial onset in oral mucosa

Kenichi Hiramoto, Jouji Nomura, Kasumi Shimizu, Miki Nishiura, Hiroshi Morita, Takashi Takeoka, Toshiro Tagawa

Journal:

Journal of Oral and Maxillofacial Surgery Medicine and Pathology

Year:

2012

Language:

english

File:

PDF, 759 KB

english, 2012

40

Voltage gain dependence of the negative differential conductance width in silicon single-hole transistors

Miyaji, Kousuke, Saitoh, Masumi, Hiramoto, Toshiro

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 479 KB

english, 2006

41

On the origin of tunneling barriers in silicon single electron and single hole transistors

Ishikuro, Hiroki, Hiramoto, Toshiro

Journal:

Applied Physics Letters

Year:

1999

Language:

english

File:

PDF, 398 KB

english, 1999

42

Extension of Coulomb blockade region by quantum confinement in the ultrasmall silicon dot in a single-hole transistor at room temperature

Saitoh, Masumi, Hiramoto, Toshiro

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 655 KB

english, 2004

43

Coulomb blockade in VLSI-compatible multiple-dot and single-dot MOSFETs

HIRAMOTO, TOSHIRO, ISHIKURO, HIROKI

Journal:

International Journal of Electronics

Year:

1999

Language:

english

File:

PDF, 419 KB

english, 1999

44

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Experimental study on silicon nanowire nMOSFET and single-electron transistor at room temperature under uniaxial tensile strain

Jeong, YeonJoo, Miyaji, Kousuke, Hiramoto, Toshiro

Year:

2008

Language:

english

File:

PDF, 1.16 MB

english, 2008

45

[IEEE 2010 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2010.06.15-2010.06.17)] 2010 Symposium on VLSI Technology - Mobility enhancement over universal mobility in (100) silicon nanowire gate-all-around MOSFETs with width and height of less than 10nm range

Chen, Jiezhi, Saraya, Takuya, Hiramoto, Toshiro

Year:

2010

Language:

english

File:

PDF, 753 KB

english, 2010

46

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Mobility enhancement in silicon nanowire transistors

Hiramoto, Toshiro, Chen, Jiezhi, Saraya, Takuya

Year:

2010

Language:

english

File:

PDF, 954 KB

english, 2010

47

[IEEE 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Grenoble, France (2012.03.6-2012.03.7)] 2012 13th International Conference on Ultimate Integration on Silicon (ULIS) - Characteristics control of single electron transistor with floating gate by charge pump circuit

Nozue, Motoki, Suzuki, Ryota, Nomura, Hirotoshi, Saraya, Takuya, Hiramoto, Toshiro

Year:

2012

Language:

english

File:

PDF, 117 KB

english, 2012

48

Observation of Single Electron Transport via Multiple Quantum States of a Silicon Quantum Dot at Room Temperature

Lee, Sejoon, Lee, Youngmin, Song, Emil B., Hiramoto, Toshiro

Journal:

Year:

2014

Language:

english

File:

PDF, 1.59 MB

english, 2014

49

Characteristics control of room-temperature operating single electron transistor with floating gate by charge pump circuit

Nozue, Motoki, Suzuki, Ryota, Nomura, Hirotoshi, Saraya, Takuya, Hiramoto, Toshiro

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 657 KB

english, 2013

50

Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors

Kobayashi, Masaharu, Hiramoto, Toshiro

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 799 KB

english, 2008

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